MILPITAS, Calif., Mar. 25, 2015 – SanDisk Corporation (NASDAQ:SNDK), a global leader in flash storage solutions, today announced that it has successfully developed its 48 layer second generation 3D NAND, also referred to as BiCS2. Pilot production will commence as planned in the second half of 2015 in the Yokkaichi joint venture facility, with meaningful commercial production targeted for 2016.
“We are very pleased to announce our second generation 3D NAND, which is a 48 layer architecture developed with our partner Toshiba,” said Dr. Siva Sivaram, executive vice president, memory technology, SanDisk. “We utilized our first generation 3D NAND technology as a learning vehicle, enabling us to develop our commercial second generation 3D NAND, which we believe will deliver compelling storage solutions for our customers.”
SanDisk plans to use the second generation 3D NAND technology across a broad range of solutions, from removable products to enterprise SSDs.
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 company, is a global leader in flash storage solutions. For more than 25 years, SanDisk has expanded the possibilities of storage, providing trusted and innovative products that have transformed the electronics industry. Today, SanDisk’s quality, state-of-the-art solutions are at the heart of many of the world's largest data centers, and embedded in advanced smart phones, tablets and PCs. SanDisk’s consumer products are available at hundreds of thousands of retail stores worldwide. For more information, visit www.sandisk.com.
© 2015 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s).
This news release contains certain forward-looking statements, including expectations for 3D NAND technology, including its development, production and timing and location thereof, capabilities, performance and use, that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: our 3D NAND technology or our solutions utilizing this new technology may not be available when we expect or perform as expected; we may experience difficulties or delays in developing, producing or ramping with acceptable yields 3D NAND technology, including as a result of construction difficulties or delays or failure to manage other risks associated with our ventures and strategic partnerships with Toshiba; or the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent annual report on Form 10-K. We do not intend to update the information contained in this news release.